High-power semiconductor light-emitting diodes have a huge future in place of incandescent lamps, but technical problems must first be solved. The geometry of a semiconductor light emitting diode includes two types: a lateral structure and a vertical structure. The main problems of high-power gallium nitride-based semiconductor light-emitting diodes with a lateral structure of sapphire as a growth substrate include low heat dissipation efficiency, current congestion, low current density, and high production cost. In order to solve the heat dissipation problem of the high-power GaN-based semiconductor light-emitting diode of the lateral structure, a flip-chip soldering technique has been proposed. However, the flip-chip bonding technology is complicated in process and high in production cost. The two electrodes of the conventional vertical structure GaN-based semiconductor light-emitting diode with the silicon carbide wafer as the original growth substrate are respectively excellent on both sides of the growth substrate. The heat dissipation efficiency, the current distribution is uniform, the current congestion is improved, the current density is increased, and the material of the light-emitting layer is fully utilized. However, silicon carbide wafers are extremely costly. The two electrodes of the conventional vertical structure GaN-based semiconductor light-emitting diode with sapphire as the original growth substrate are respectively on both sides of the support substrate, and the light-emitting diode has high heat dissipation efficiency, uniform current distribution, current congestion improvement, current The increase in density makes full use of the material of the light-emitting layer, and the light extraction efficiency is improved. Sapphire is an electrically insulating material and therefore needs to be stripped of the growth substrate. However, the stripping technology is still immature and needs further improvement.
Therefore, there is a need for a novel vertical structure of gallium nitride based semiconductor light emitting diodes and a low cost mass production process while avoiding the disadvantages mentioned above.
The first electrode and the second electrode of the novel vertical structure gallium nitride based semiconductor light emitting diode are respectively laminated on both sides of the gallium nitride based epitaxial layer, thereby having the advantages of a conventional vertical structure gallium nitride based semiconductor light emitting diode.
The first electrode and the second electrode of the novel vertical structure gallium nitride based semiconductor light emitting diode are laminated on the same side of the growth substrate, and therefore, it is not necessary to peel off the growth substrate.
The main process steps of low-cost mass production of a novel vertical structure GaN-based semiconductor light-emitting diode are as follows: on a growth substrate, an intermediate dielectric layer is stacked, and a gallium nitride-based epitaxial layer is grown on the gallium nitride-based epitaxial layer. A second electrode having an optimized pattern is laminated, and the gallium nitride-based epitaxial layer is etched in a predetermined region to know that the metal layer in the intermediate dielectric layer is exposed, and the first electrode is laminated on the exposed metal layer. The process described does not require bonding of the support substrate to the gallium nitride based epitaxial layer or the process of stripping the growth substrate.
The technology and production method of a high-power gallium nitride-based semiconductor light-emitting diode that grows a novel vertical structure can be applied to the growth of other semiconductor light-emitting diodes.
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