As of this year's IEEE IEDM Conference to be held on December 5-7 this year, researchers from three different teams will present the latest performance records that compound semiconductors can currently achieve.
The Intel team will reveal a tri-gate FinFET quantum well InGaAs MOSFET with 30 nm gate.
Teledyne's team, in partnership with the Massachusetts Institute of Technology (MIT), will set a new benchmark for high electron mobility transistors (HEMTs). The researchers fabricated an enhanced 40 nm InGaAs metamorphic-HEMT on a GaAs substrate and demonstrated transconductance performance in excess of 2.7 mS/μm. The device has a cut-off frequency (ft) of 688 GHz. According to Teledyne researchers, the record is higher than all FETs using other materials systems.
Another team consisting of HRL Laboratories/UC-San Diego will also demonstrate innovative HEMT component performance, but this component is a GaN version of ultra-short gate length.
It is understood that among compound semiconductors, gallium nitride is the only one that can support both high current density and high breakdown voltage. As with the R&D achievements demonstrated by the HRL team, this component also provides good high-frequency performance.
The researchers constructed an ultra-small, 20nm-long AlN/GaN/AlGaN double-heterostructure HEMT with a cut-off frequency of 310 GHz and a maximum oscillating frequency (fmax) of 364 GHz. The team achieved these results by improving gate length and source scaling, as well as innovative self-aligned gate technology, vertical epitaxial scaling, and reduced parasitic resistance. These devices show a high degree of consistency on the wafer with a breakdown voltage of 9V.
In addition, later in the expert forum, it will also discuss whether silicon carbide (SiC) or gallium nitride (GaN) can replace germanium in power semiconductor applications.
The expert forum, moderated by Paul Chow, professor of electronic computer and systems engineering at the Rensselaer Polytechnic Institute, will discuss the trade-offs that must be made when these two technologies are applied to power semiconductors.
Separate tantalum carbides, as well as the more recently discussed gallium nitride power devices, have entered the commercialization stage with lower power losses and wider operating conditions than conventional tantalum components. However, the cost of these components is still high, and long-term reliability is still a major problem.
In the expert forum, one of the spindles is whether the future separation of tantalum carbide or gallium nitride power components can be manufactured in the silicon factory, thereby reducing costs and expanding its application areas. In addition, it will be discussed whether it is ultimately possible to use tantalum carbide or tantalum nitride to integrate power, mixed signals, RF and optoelectronic components and circuits in a side-by-side manner along with tantalum elements into a single product.
Experts and scholars participating in this forum include former IR executives and are currently self-contracted consulting company ACOO Ltd. Michael Breiere, president; Peter Frederichs, managing director of SiCED, a joint venture between Siemens and Infineon; Dan Kinzer, technology vice president, senior technology, Fairchild Semiconductor; Umesh Mishra, professor of electronic and computer engineering, University of California, Santa Barbara; And Cree Inc. Co-founder John Palmour.
The Intel team will reveal a tri-gate FinFET quantum well InGaAs MOSFET with 30 nm gate.
Teledyne's team, in partnership with the Massachusetts Institute of Technology (MIT), will set a new benchmark for high electron mobility transistors (HEMTs). The researchers fabricated an enhanced 40 nm InGaAs metamorphic-HEMT on a GaAs substrate and demonstrated transconductance performance in excess of 2.7 mS/μm. The device has a cut-off frequency (ft) of 688 GHz. According to Teledyne researchers, the record is higher than all FETs using other materials systems.
Another team consisting of HRL Laboratories/UC-San Diego will also demonstrate innovative HEMT component performance, but this component is a GaN version of ultra-short gate length.
It is understood that among compound semiconductors, gallium nitride is the only one that can support both high current density and high breakdown voltage. As with the R&D achievements demonstrated by the HRL team, this component also provides good high-frequency performance.
The researchers constructed an ultra-small, 20nm-long AlN/GaN/AlGaN double-heterostructure HEMT with a cut-off frequency of 310 GHz and a maximum oscillating frequency (fmax) of 364 GHz. The team achieved these results by improving gate length and source scaling, as well as innovative self-aligned gate technology, vertical epitaxial scaling, and reduced parasitic resistance. These devices show a high degree of consistency on the wafer with a breakdown voltage of 9V.
In addition, later in the expert forum, it will also discuss whether silicon carbide (SiC) or gallium nitride (GaN) can replace germanium in power semiconductor applications.
The expert forum, moderated by Paul Chow, professor of electronic computer and systems engineering at the Rensselaer Polytechnic Institute, will discuss the trade-offs that must be made when these two technologies are applied to power semiconductors.
Separate tantalum carbides, as well as the more recently discussed gallium nitride power devices, have entered the commercialization stage with lower power losses and wider operating conditions than conventional tantalum components. However, the cost of these components is still high, and long-term reliability is still a major problem.
In the expert forum, one of the spindles is whether the future separation of tantalum carbide or gallium nitride power components can be manufactured in the silicon factory, thereby reducing costs and expanding its application areas. In addition, it will be discussed whether it is ultimately possible to use tantalum carbide or tantalum nitride to integrate power, mixed signals, RF and optoelectronic components and circuits in a side-by-side manner along with tantalum elements into a single product.
Experts and scholars participating in this forum include former IR executives and are currently self-contracted consulting company ACOO Ltd. Michael Breiere, president; Peter Frederichs, managing director of SiCED, a joint venture between Siemens and Infineon; Dan Kinzer, technology vice president, senior technology, Fairchild Semiconductor; Umesh Mishra, professor of electronic and computer engineering, University of California, Santa Barbara; And Cree Inc. Co-founder John Palmour.
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