Recently, the Institute of Microelectronics of the Chinese University of Science and Technology and SMIC International IC Manufacturing Co., Ltd. have made new progress in the cooperation of production, education and research. The physical model of avoiding the development defects in the polar coordinate system was successfully established in the lithography process module. This model can effectively reduce the development defects in immersion lithography, help to shorten the development cycle, reduce research and development costs, and provide recommendations for determining optimum process parameters under different conditions. The results have been published in the International Journal of Microlithography, Journal of Micro-Nanolithography MEMS and MOEMS. Ultra-large-scale integrated circuit advanced lithography process, the pattern size is smaller and smaller, the density is higher and higher, the residual defects after the development of the patterned substrate surface is more and more sticky, how to effectively remove the development defects has been the industry explored One of the hot issues is that there is no complete solution for this. Using the school-enterprise cooperation platform, Ma Ling, a student at the National University of Microelectronics, successfully established a viscous fluid mechanics-based approach through continuous consultation and discussion with the school mentors and corporate mentors, and in close collaboration with the SMIC lithography R&D team. The physical model of developing defects can explore the various physical limitations that occur during development on a single silicon wafer and the removal solutions for defects of different specifications, opening up a whole new path for solving this problem. At the same time, this model also helps to improve the related algorithm of the homogenizer in domestic equipment.
Figure 1: Residual Defect Diagram after Deionized Water Development
From the point of view of the force of the defect, the model is subjected to deionized water (DIW) flushing on the defects remaining on the surface of the rotating wafer after development, and it is mainly subjected to three forces, ie, deionized water. Thrust, rotation brings centrifugal force and nitrogen thrust, and the resultant force changes with radius as shown in Fig. 2(a). When the resultant force reaches the threshold, the defect particles will be washed away by deionized water from the edge surface of the lithographic pattern. The threshold is defined as the viscous force between the surface of the residual defects after development and the wafer surface. When the resultant force is less than the threshold, ie, the total removal force of the three residual defects is less than the residual force between the residual defect and the wafer, the residual after development cannot be removed, resulting in the final post-development defect, in the subsequent exposure. Lead to dead pixels, as shown in Figure 2(b).
Figure 2: (a) Change in resultant forces due to defects (b) Distribution of development defects on wafers
After comparison and verification, the accuracy and accuracy of the model are high and it has good reference value for research and development. In addition, several interactions between physical parameters affecting defect removal are discussed in the article. In the process of establishing the model, the engineering experimental environment provided by the enterprise complements the theoretical innovation capabilities of universities and research institutes, and the mode of synergistic education between industry, universities, and research institutes has achieved remarkable results, which has greatly promoted the process of linking talent training with industry. .
Fig. 3 Simulation results: (a) Comparison of defect distribution experiment diagram and (b) Comparison of defect distribution simulation diagram
The Institute of Microelectronics of the Chinese Academy of Sciences was issued by the State Council in June 2014 as the “Outline for Promoting the Development of the National IC Industryâ€, the Ministry of Education of the People's Republic of China in July 2015, the National Development and Reform Commission, the Ministry of Science and Technology, the Ministry of Industry and Information Technology, the Ministry of Finance, and the State Bureau of Foreign Experts jointly decided to support research. Under the background of the establishment of the first batch of 9 colleges and universities to establish a demonstration microelectronics institute, the Institute of Microelectronics of the Chinese Academy of Sciences will take the lead in hosting the project, in order to fill the gaps in the national integrated circuit industry's high-quality talents as soon as possible, and adhering to the concept of promoting sustainable and coordinated development of the industrial chain. Established an exemplary model of microelectronics.
The college has established an open mode of running schools with leading companies such as SMIC, Changjiang Storage, Huajin Packaging and Xiamen Sanan in the form of corporate customization courses to form a diversified talent training method. At the same time, the college is also a member unit of the “National Institute of Model Microelectronics Convergence Development Alliance of Production, Studies, and Research†and a unit affiliated with the Union Secretariat. The first batch of students of the college are now conducting research projects in SMIC, Shanghai, SMIC (Beijing), and the Yangtze River in various directions such as design, manufacturing, equipment, and materials. Journal of Micro-Nanolithography MEMS and MOEMS magazine is a well-known academic journal in the field of international integrated circuit process research. It mainly publishes original academic papers on semiconductor lithography, manufacturing, packaging and device integration technologies.
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